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SCHOTT |
SEFUSE Thermal Links |
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CDE |
Mica Capacitors |
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SCHOTT |
SEFUSE Thermal Links |
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Vishay |
Optocoupler A1 C2 4C 3E 17907 DESCRIPTION The 110 °C rated SFH1617A (DIP) feature a high current transfer ratio, low coupling capacitance and high isolation voltage. These couplers have a GaAs infrared diode emitter, which is optically coupled to a silicon p |
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Vishay |
GaAs infrared emitting diode emitter a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH1690 series is available only on tape and reel. There a |
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Vishay |
GaAs infrared emitting diode emitter a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH1690 series is available only on tape and reel. There a |
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Vishay |
GaAs infrared emitting diode emitter a high current transfer ratio, low coupling capacitance, and high isolation voltage. The coupling devices are designed for signal transmission between two electrically separated circuits. The SFH1690 series is available only on tape and reel. There a |
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IXYS Corporation |
Power MOSFETs |
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TOKO |
Multilayer Chip Inductors 800MHz) • • • Tolerance / Inductance / Tolerance for the Inductance Mark S J K Tolerance ± 0.3nH ± 5% ± 10% Pattern Dimensions (unit: mm) Flow Soldering Reflow Soldering a 0.3~0.5 0.3~0.5 b 0.4~0.5 0.3~0.5 c 0.3~0.5 0.3~0.4 Conditions |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 95 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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SemiHow |
N-Channel MOSFET Originative New Design Superior Avalanche Rugged Technology Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 58 nC (Typ.) Extended Safe Operating Area Lower RDS( |
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Rohm |
Zener Diode 1)2-pin ultra mini-mold type for high-density mounting (EMD2) 2) High reliability 3)Can be mounted automatically,using chip mounter. Construction Silicon epitaxial planer 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 EX. EDZFH3.6B 0.6±0.1 ＥMD |
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Microchip |
32-bit MCU • 2.1V to 3.6V, -40ºC to +85ºC, DC to 252 MHz • 2.1V to 3.6V, -40ºC to +125ºC, DC to 180 MHz Core: 252 MHz (up to 415 DMIPS) M-Class • 16 KB I-Cache, 4 KB D-Cache • FPU for 32-bit and 64-bit floating point math • MMU for optimum embedded OS executio |
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SCHOTT |
SEFUSE Thermal Links |
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Toshiba Semiconductor |
FAST RECOVERY DIODE (HIGH SPEED RECTIFIER APPLICATIONS) |
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Intersil Corporation |
12A/ 350V and 400V/ 0.380 Ohm/ N-Channel Power MOSFETs • 12A, 350V and 400V • rDS(ON) = 0.380Ω • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D Ordering Information PART NUMBER RFH12N35 RFH12N40 PACKAGE TO-218AC TO-218AC BRAND RFH12N35 RFH12N40 G |
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IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
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IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
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IXYS Corporation |
Power MOSFET |
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IXYS Corporation |
Polar MOSFETs z 1.13/10 Nm/lb.in. 6 4 2 g g g z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS I |
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Desde 2024. D4U Semiconductor.
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