Excelliance MOS EMD Hoja de datos

No.	parte #	Fabricante	Descripción
1	EMD02N70CS	Excelliance MOS	MOSFET OL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RD
2	EMD02N60CSK	Excelliance MOS	MOSFET SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDS
3	EMD60N15A	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor ss Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD60N15A LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current1 Drain-Source On-Sta
4	EMD03N06ES	Excelliance MOS	MOSFET
5	EMD02N06E	Excelliance MOS	MOSFET W 2015/9/30 p.1 EMD02N06E ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Vol
6	EMDA0P10F	Excelliance MOS	MOSFET
7	EMD60N10F	Excelliance MOS	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor NIT °C / W p.1 EMD60N10F ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Volt
8	EMD02N60F	Excelliance MOS	MOSFET OL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RD
9	EMD02N60A	Excelliance MOS	MOSFET OL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS RD
10	EMD11N15E	Excelliance MOS	Single N-Channel Logic Level Enhancement Mode Field Effect Transistor limited by maximum junction temperature. 2Duty cycle < 1％ 362.5°C / W when mounted on a 1 in2 pad of 2 oz copper. 4Guarantee by Engineering test TYPICAL MAXIMUM 0.45 62.5 UNIT °C/W 2021/3/15 P.1 A.0 EMD11N15E ▪ELECTRICAL CHARACTERISTICS (T
11	EMD60N15E	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor J = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current On‐State Drain Current1 Drain‐Source On‐State R
12	EMDA2N20F	Excelliance MOS	MOSFET
13	EMD10N06A	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor age limited. UNIT V A mJ W °C UNIT °C / W 2014/8/15 p.1 EMD10N06A ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshol
14	EMDA1N10F	Excelliance MOS	MOSFET
15	EMD60N15F	Excelliance MOS	N-Channel Logic Level Enhancement Mode Field Effect Transistor 2/12/19 TYPICAL MAXIMUM 3.5 62.5 UNIT °C / W p.1 ELECTRICAL CHARACTERISTICS (TC = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS EMD60N15F LIMITS UNIT MIN TYP MAX STATIC Drain-Source Breakdown Voltage Gate Threshold Vol
16	EMD10N70F	Excelliance MOS	MOSFET ER SYMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS
17	EMD02N60CS	Excelliance MOS	MOSFET YMBOL TEST CONDITIONS LIMITS UNIT MIN TYP MAX STATIC Drain‐Source Breakdown Voltage Gate Threshold Voltage Gate‐Body Leakage Zero Gate Voltage Drain Current Drain‐Source On‐State Resistance1 Forward Transconductance1 V(BR)DSS VGS(th) IGSS IDSS
18	EMD60N10A	Excelliance MOS	MOSFET
19	EMDA5N10A	Excelliance MOS	MOSFET
20	EMD03N05HS	Excelliance MOS	MOSFET