| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Excelics Semiconductor |
High Efficiency Heterojunction Power FET 46 290 320 480 500 -1.0 -11 -7 -15 -14 22 o % 660 mA mS -2.5 V V V C/W Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=4.5mA Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA |
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Excelics Semiconductor |
High Efficiency Heterojunction Power FET -2.5 V V V o Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA Thermal Resistance (Au-Sn Eutectic Attach) -11 -7 -15 -14 33 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2 Drain-Source Voltage 12V 8V Vds |
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Excelics Semiconductor |
High Efficiency Heterojunction Power FET 46 290 320 480 500 -1.0 -11 -7 -15 -14 22 o % 660 mA mS -2.5 V V V C/W Saturated Drain Current Vds=3V, Vgs=0V Transconductance Pinch-off Voltage Vds=3V, Vgs=0V Vds=3V, Ids=4.5mA Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA |
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Desde 2024. D4U Semiconductor.
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