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EPA160B |
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| Part Number | EPA160B |
| Manufacturer | Excelics Semiconductor |
| Description | Excelics DATA SHEET • • • • • • +31.0dBm TYPICAL OUTPUT POWER 5.5dB TYPICAL POWER GAIN AT 18GHz 0.3 X 1600 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE P... |
| Features |
-2.5
V V V
o
Drain Breakdown Voltage Igd=1.6mA Source Breakdown Voltage Igs=1.6mA Thermal Resistance (Au-Sn Eutectic Attach)
-11 -7
-15 -14 33
C/W
MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS ABSOLUTE1 CONTINUOUS2
Drain-Source Voltage 12V 8V Vds Gate-Source Voltage -8V -3V Vgs Drain Current Idss 435mA Ids Forward Gate Current 80mA 14mA Igsf Input Power 28dBm @3dB Compression Pin o Channel Temperature 175 C 150oC Tch Storage Temperature -65/175oC -65/150oC Tstg Total Power Dissipation 4.1W 3.4W Pt Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any ... |
| Document |
 EPA160B Data Sheet
PDF 53.81KB |
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