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ETC |
HGTP12N60 • 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar trans |
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ETC |
100Base-TX/FX Converter n n n n n General Description The TP112 is a single chip media converter for 100Base-TX to 100Base-FX. The TP112 support one 100Base-TX port over CAT5 twisted pair cable and one ECL interface to connect with fiber module to apply in 100Base-TX/FX co |
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ETC |
Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 16 A ) ◆ High Commutation dv/dt ◆ Non-isolated Type ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is suitable for AC switching application, phase contr |
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ETC |
ILLUMINATED PUSHBUTTON SWITCHES • • • • • • • • Momentary switch action 12mm square Very low profile High brilliance illumination 3 LED colour options Suitable for membrane backlighting Standard 2.54mm terminal pitch High reliability due to simplified operating mechanism and low cu |
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ETC |
Bi-Directional Triode Thyristor Repetitive Peak Off-State Voltage : 600V R.M.S On-State Current ( IT(RMS)= 12 A ) ◆ High Commutation dv/dt ◆ ◆ ○ 2.T2 ▼ ▲ ○ 3.Gate 1.T1 ○ General Description This device is suitable for AC switching application, phase control application such |
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ETC |
Touch Panel |
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ETC |
Touch Panel |
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Desde 2024. D4U Semiconductor.
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