Busque con el número de pieza junto con el fabricante o la descripción
P12N60 |
Click to view a larger image
| Part Number | P12N60 |
| Manufacturer | ETC |
| Description | The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conductio... |
| Features |
• 12A, 600V • Latch Free Operation • Typical Fall Time <500ns • High Input Impedance • Low Conduction Loss www.DataSheet4U.com Description The IGBT is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. Terminal Diagram N-CHANNEL ENHANCEMENT MODE C The IGBTs are ideal for many high voltage switching applications operating at frequencies wher... |
| Document |
 P12N60 Data Sheet
PDF 67.03KB |
Similar Datasheet
Desde 2024. D4U Semiconductor.
|