| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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ETC |
(NMXSO Series) DC/DC Converter 5w Dual Industry Standard Pinout Pin Compatible with NMXU Output Regulation 0.5% 1kVDC Isolation Single or Dual Output Short Circuit Protected Low Profile Package Efficiency to 75% Power Density 0.53W/cm3 5V & 12V input 5V, 12V and 15V Output Footprint 9.52c |
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Texas Instruments |
RF Synthesizer •1 10-MHz to 20-GHz output frequency • –110 dBc/Hz phase noise at 100-kHz offset with 15-GHz carrier • 45-fs rms jitter at 7.5 GHz (100 Hz to 100 MHz) • Programmable output power • PLL key specifications – Figure of merit: –236 dBc/Hz – Normalized 1/ |
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ETC |
Brushed DC Motor Driver IVCC IVDD INA=INB= L;VCC=7V; VDD=10V; INA=H OR INB=H; INA=H OR INB=H; VINH VINL VHYS IINH VINH=2.5V,VCC=3V RIN VINH=3V,VCC=3V MX612 IO=±200mA VDD=6V TA=25℃ RON IO=±1.2A VDD=6.5V TA=25℃ TSD TSDH MOSFET PMOS NMOS VPD I=400mA |
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Texas Instruments |
Frequency Synthesizers • Quadruple Modulus Prescaler for Lower Divids – RF PLL: 16/17/20/21 or 32/33/36/37 – IF PLL: 8/9 or 16/17 • Advanced Delta Sigma Fractional Compensation – 12-Bit or 22-Bit Selectable Fractional Modulus – Up to 4th Order Programmable Delta-Sigma Modu |
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Texas Instruments |
RF Synthesizer • Output frequency: 45 MHz to 22.6 GHz • 36-fs rms jitter (12 kHz – 95 MHz) at 6 GHz • High-performance PLL – Figure of merit: –236 dBc/Hz – Normalized 1/f noise: –134 dBc/Hz – -95 dBc Integer Mode Spurs (fPD=100 MHz) – High phase detector frequency |
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Texas Instruments |
2.6 GHz Delta-Sigma Fractional-N PLL 1 •2 Low In-Band Phase Noise and Low Fractional Spurs • 12 Bit or 22 Bit Selectable Fractional Modulus • Up to 4th Order Programmable Delta-Sigma Modulator • Enhanced Anti-Cycle Slip Fastlock Circuitry – Fastlock – Cycle Slip Reduction – Integrated T |
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ETC |
Low Dropout Linear Regulator 1.5V TJ = 25℃ （-2%） 1.250 --0.3 0.5 3 65 VOUT +1.5V< VIN-<10v IOUT = 10mA VIN -VOUT =1.5V 10mA ≤IOUT - ≤ 1 A VOUT +1.5V< VIN-<10v 10mA ≤IOUT - ≤ 1 A IOUT = 1 A 0.2 1.2 4 1.8 0.07 175 TJ = 25℃, 10Hz≤f≤10kHz fRIPPLE =120HZ, Cout =22μF VIN - VOUT |
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ETC |
8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package n n n Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Temperature Ranges Weight: • WEDPNF8M721V-XBX - 2.5 grams typical n n n n Sector Architecture • One 16KByte, two 8KBytes, one 32KByte, and fif teen 6 |
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Texas Instruments |
Wideband Frequency Synthesizer •1 Output Frequency from 50 to 3760 MHz • Input Clock Frequency up to 900 MHz • Phase Detector Frequency up to 200 MHz • Supports Fractional and Integer Modes • –229 dBc/Hz Normalized PLL Phase Noise • –120.8 dBc/Hz Normalized PLL 1/f Noise • –137 dB |
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Texas Instruments |
RF Synthesizer •1 Output Frequency Range from 20 to 9800 MHz • Industry Leading Phase Noise Performance – VCO Phase Noise: –134.5 dBc/Hz at 1-MHz Offset for 6-GHz Output – Normalized PLL Noise Floor: –231 dBc/Hz – Normalized PLL Flicker Noise: –126 dBc/Hz – 49-fs R |
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Texas Instruments |
6.4-GHz Low power wideband RF synthesizer •1 Output frequency: 12.5 MHz to 6.4 GHz • Low power consumption: 75 mA at 3.3-V supply • –106-dBc/Hz Phase noise at 100-kHz offset with 6.4-GHz carrier • PLL figure of merit: –232 dBc/Hz • PLL normalized 1/f noise: –123.5 dBc/Hz • 32-Bit Fractional- |
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Texas Instruments |
3-GHz Delta-Sigma Low-Power Dual PLLatinum Frequency Synthesizer •1 Quadruple Modulus Prescaler for Lower Divides – RF PLL: 8/9/12/13 or 16/17/20/21 – IF PLL: 8/9 or 16/17 • Advanced Delta-Sigma Fractional Compensation – 12-Bit or 22-Bit Selectable Fractional Modulus – Up to 4th Order Programmable Delta-Sigma Modu |
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ETC |
3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM • PC100/133 compliant • Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16) • Fully synchronous - All signals referenced to positive edge of clock • Four internal banks controlled by BA0/BA1 (bank se |
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ETC |
STANDARD LOW FREQUENCY SMD CRYSTALS ) 25˚C 5˚C -0.035 ppm/˚C2, Typical 30000 min. 1.7 pF, Typical 0.0029 pF, Typical 580, Typical 3 ppm max. at 25˚C 3˚C 500M min. at 100V DC 15V XY-Cut -40˚C to 85˚C -55˚C to 125˚C 10 ppm max. 5 ppm max. 5 ppm max. 20 seconds max. at 230˚C 0.95±0.05 2 |
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ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
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ETC |
Ultra-Fast-Recovery Rectifier Diodes /200 500/1000 500/1000 100/200 500/1000 500/1000 500/1000 500/1000 100/200 100/200 500/1000 Rth (j- ) Mass Fig. Rth (j-c) (g) No. (°C/W) 2.0 22 20 17 15 12 12 10 8 8 4.0 4.0 4.0 4.0 4.0 4.0 2.0 4.0 4.0 2.0 2.0 1.04 0.13 0.2 0.3 Surface Mount MP3-30 |
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ETC |
HIGH SPEED CMOS PROGRAMMABLE ANALOG MULTIPLEXERS |
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ETC |
8Mx72 Synchronous DRAM + 8Mb Flash Mixed Module Multi-Chip Package n n n Package: • 275 Plastic Ball Grid Array (PBGA), 32mm x 25mm Commercial, Industrial and Military Temperature Ranges Weight: • WEDPNF8M721V-XBX - 2.5 grams typical n n n n Sector Architecture • One 16KByte, two 8KBytes, one 32KByte, and fif teen 6 |
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ETC |
MEMORY MODULE SDRAM 128Mx16-SOP |
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ETC |
MX29LV320 • Low Power Consumption GENERAL FEATURES - Low active read current: 10mA (typical) at 5MHz • 4,194,304 x 8 / 2,097,152 x 16 switchable - Low standby current: 200nA (typical) • Sector Structure • Minimum 100,000 erase/program cycle - 8K-Byte x 8 and 6 |
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Desde 2024. D4U Semiconductor.
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