AS4LC8M8S0 ETC 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM Datasheet. existencias, precio

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AS4LC8M8S0

ETC
AS4LC8M8S0
AS4LC8M8S0 AS4LC8M8S0
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Part Number AS4LC8M8S0
Manufacturer ETC
Description Output disable/write mask Address inputs Bank select inputs Input/output Row address strobe Column address strobe Write enable Chip select Power (3.3V ± 0.3V) Ground Clock input Clock enable AS4LC4M1...
Features
• PC100/133 compliant
• Organization - 2,097,152 words × 8 bits × 4 banks (8M×8) - 1,048,576 words × 16 bits × 4 banks (4M×16)
• Fully synchronous - All signals referenced to positive edge of clock
• Four internal banks controlled by BA0/BA1 (bank select)
• High speed - 133/125/100 MHz - 5.4 ns (133 MHz)/6 ns (125/100 MHz) clock access time
• Low power consumption - Standby: 7.2 mW max, CMOS I/O
• 4096 refresh cycles, 64 ms refresh interval
• Auto refresh and self refresh
• Automatic and direct precharge
• Burst read, single write operation
• Can assert random column address in every cycle
• ...

Document Datasheet AS4LC8M8S0 Data Sheet
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