| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Texas Instruments |
Filter-Free Class-D Stereo Amplifier •1 Supports Multiple Output Configurations – 2 × 50 W Into a 4-Ω BTL Load at 21 V (TPA3116D2) – 2 × 30 W Into a 8-Ω BTL Load at 24 V (TPA3118D2) – 2 × 15 W Into a 8-Ω BTL Load at 15 V (TPA3130D2) • Wide Voltage Range: 4.5 V to 26 V • Efficient Class- |
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Texas Instruments |
Filter-Free Class-D Stereo Amplifier •1 Supports Multiple Output Configurations – 2 × 50 W Into a 4-Ω BTL Load at 21 V (TPA3116D2) – 2 × 30 W Into a 8-Ω BTL Load at 24 V (TPA3118D2) – 2 × 15 W Into a 8-Ω BTL Load at 15 V (TPA3130D2) • Wide Voltage Range: 4.5 V to 26 V • Efficient Class- |
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ETC |
Multiple furnace disabilities Timing-IC |
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ETC |
PNP SILICON TRANSISTOR |
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ETC |
NPN Silicon Bipolar Transistor |
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ETC |
Silicon N-Channel IGBT High Speed Power Switching |
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ETC |
Metallized polypropylene film Interference Suppression capacitor %Ï metallized polypropylene structure %Ï Withstanding overvoltage stressing %Ï Excellent active and passive flame resistant abilities %Ï Widely used in across-the-line,interference suppression circuit,etc. % [‰Qh‹¤‹ÁS sl A a v o r p y t e f a %Ï C Q |
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ETC |
NPN Silicon Transistor Breakdown Voltage at IE=10μA Collector Cutoff Current at VCB=40V Emitter Cutoff Current at VEB=3V Collector Saturation Voltage at IC=100mA, IB=10mA Gain Bandwidth Product at VCE=6V, IC=10mA Output Capacitance at VCB=6V, f=1MHz Noise Figure at VCE=6V, |
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ETC |
Silicon NPN Power Transistor ee Datasheet http://www.datasheet4u.com/ INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SC4977 MAX UNIT VCEO( |
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Texas Instruments |
15-W Fil ter-Free Stereo Class-D Audio Power Amplifier •1 15-W/ch into an 8-Ω Loads at 10% THD+N From a 16-V Supply • 10-W/ch into 8-Ω Loads at 10% THD+N From a 13-V Supply • 30-W into a 4-Ω Mono Load at 10% THD+N From a 16-V Supply • 90% Efficient Class-D Operation Eliminates Need for Heat Sinks • Wide |
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ETC |
Silicon NPN Power Transistors =25 unless otherwise specified www.datasheet4u.com SYMBOL PARAMETER CONDITIONS V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 VCEsat Collector-emitter saturation voltage IC=4A; IB=0.8A VBEsat Base-emitter saturation voltage IC=4A; I |
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Texas Instruments |
Filter-Free Class-D Stereo Amplifier •1 Supports Multiple Output Configurations – 2 × 50 W Into a 4-Ω BTL Load at 21 V (TPA3116D2) – 2 × 30 W Into a 8-Ω BTL Load at 24 V (TPA3118D2) – 2 × 15 W Into a 8-Ω BTL Load at 15 V (TPA3130D2) • Wide Voltage Range: 4.5 V to 26 V • Efficient Class- |
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ETC |
Visible Light Emitting Diodes |
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ETC |
(2SJ118 / 2SJ119) SILICON P-CHANNEL MOS FET |
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ETC |
NPN Silicon Transistor |
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Texas Instruments |
Low-Power Rail-to-Rail Input/Output Operational Amplifiers • Qualified for Automotive Applications • AEC-Q100 Qualified With the Following Results: – Device Temperature Grade 1: –40°C to +125°C Ambient Operating Temperature Range – Device HBM ESD Classification Level 2 – Device CDM ESD Classification Level C |
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Texas Instruments |
Silicon NPN Transistor |
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ETC |
Silicon NPN Transistor |
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ETC |
Silicon phototransistor |
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Texas Instruments |
Low-Jitter Crystal Oscillator Clock Generator 1 •2 Single 3.3-V Supply • High-Performance Clock Generator, Incorporating Crystal Oscillator Circuitry with Integrated Frequency Synthesizer • Low Output Jitter: As low as 380 fs (RMS integrated between 10 kHz to 20 MHz) • Low Phase Noise at 312.5 M |
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Desde 2024. D4U Semiconductor.
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