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ETC |
Universal card reader chip 0 5.2.1 PAGE0 _________________________________20 5.2.2 PAGE1 _________________________________26 5.2.3 PAGE2 _____________________________31 5.2.4 PAGE3 _____________________________35 5.2.5 PAGE4 _____________________________40 5.2.6 PAG |
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ETC |
64Kb Bytewide FRAM Memory 64K bit Ferroelectric Nonvolatile RAM • Organized as 8,192 x 8 bits • High endurance 10 Billion (1010) read/writes • 10 year data retention at 85° C • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to BBSRAM Modules • No ba |
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ETC |
Universal card reader chip |
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ETC |
Character dot matrix LCD Module Manual lue 4.75~+5.50 0~+5.0 VSS≤VIN≤VDD 0~+55 -20~+65 Unit Condition V ℃ No condition . ： （Ta=0~25℃，VDD=5.0±10%V） 1 |
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ETC |
Universal card reader chip 0 5.2.1 PAGE0 _________________________________20 5.2.2 PAGE1 _________________________________26 5.2.3 PAGE2 _____________________________31 5.2.4 PAGE3 _____________________________35 5.2.5 PAGE4 _____________________________40 5.2.6 PAG |
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ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery conc |
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ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery conc |
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ETC |
256Kb 2.7-3.6V Bytewide FRAM Memory 256K bit Ferroelectric Nonvolatile RAM • Organized as 32,768 x 8 bits • 10 year data retention at 85° C • Unlimited read/write cycles • NoDelay™ write • Advanced high-reliability ferroelectric process Superior to Battery-backed SRAM • No battery conc |
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ETC |
Universal card reader chip 0 5.2.1 PAGE0 _________________________________20 5.2.2 PAGE1 _________________________________26 5.2.3 PAGE2 _____________________________31 5.2.4 PAGE3 _____________________________35 5.2.5 PAGE4 _____________________________40 5.2.6 PAG |
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ETC |
HiPerFET Power MOSFETs International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions |
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ETC |
HiPerFET Power MOSFETs International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions |
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ETC |
HiPerFET Power MOSFETs International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic Rectifier l l l l l l Test Conditions |
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ETC |
A.F. Amplifier and Electronic Indicator |
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Desde 2024. D4U Semiconductor.
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