| No. | parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
|
|
|
ETC |
ELECTROMAGNETIC BUZZER ℃ ~ +80℃ DATE: 2000.02.18 PAGE: 1/5 PRODUCT SPECIFICATION ALP1205S (ELECTROMAGNETIC BUZZER) CUSTOMER: PRODUCER: 4. RELIABILITY TEST NO. ITEM TESTING CONDITION VARIANCE AFTER TEST 4-1 HUMIDITY 55+/-5℃,95+/-3%RH 96HRS SOUND PRESSURE LEVEL INI |
|
|
|
|
ETC |
N-Channel Power MOSFET • HIGH SPEED SWITCHING 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R = 4 .0 ( |
|
|
|
|
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P –CHANNEL ALSO AVAILABLE AS BUZ9 |
|
|
|
|
ETC |
N-Channel Power MOSFET • HIGH SPEED SWITCHING 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R = 4 .0 ( |
|
|
|
|
ETC |
N-Channel Power MOSFET t(continuos)at TC=100℃ IDM(1) Drain Current(pulsed) PD Power Dissipation at TC=25℃ dv/dt(2) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max.Operating Junction Temperature Value 110 110 ±20 13.5 8.5 37 70 5.5 -55to150 150 U |
|
|
|
|
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • N –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P –CHANNEL ALSO AVAILABLE AS BUZ9 |
|
|
|
|
ETC |
P-CHANNEL POWER MOSFET • HIGH SPEED SWITCHING 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R = 4 .0 ( |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
|
|
|
ETC |
P-CHANNEL POWER MOSFET • HIGH SPEED SWITCHING 4 3.3 (0 .1 2 9) 3.6 (0.14 3 ) 1 4 .9 (0.58 7 ) 1 5 .1 (0.59 4 ) 3 0 .1 (1 .1 8 5 ) 3 0 .3 (1 .1 9 3 ) 3 8 .0 (1.4 9 6 ) 3 8 .2 (1.5 0 4 ) 3 5 .1 (0 .2 0 1 ) 5 .9 (0 .2 3 2 ) 1 .9 5 (0 .0 7 7 ) 2 .1 4 (0 .0 8 4 ) R = 4 .0 ( |
|
|
|
|
ETC |
HIGH VOLTAGE POWER MOSFET VDSS VDGR ID IDM VGS PD IL TJ & Tstg TL 1000 1000 2.5 10 ±20 75 -55 to +150 Vdc Vdc Adc Adc Vdc Watts Adc °C °C Min 1000 2.1 Typ Max Unit Vdc Vdc nA mA mA Adc Ohms mhos Vdc Vdc pF pF pF 4.0 100 0.25 1.0 Drain Source OnResistance Forward Transc |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
|
|
|
ETC |
(BUZ905DP / BUZ906DP) P-CHANNEL POWER MOSFET 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • P –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N –CHANNEL ALSO AVAILABLE AS BUZ9 |
|
|
|
|
ETC |
(BUZ905P / BUZ906P) P-CHANNEL POWER MOSFET • HIGH SPEED SWITCHING • P –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N –CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P 0.40 (0.016) 0.79 (0.031 |
|
|
|
|
ETC |
(BUZ905P / BUZ906P) P-CHANNEL POWER MOSFET • HIGH SPEED SWITCHING • P –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • N –CHANNEL ALSO AVAILABLE AS BUZ900P & BUZ901P 0.40 (0.016) 0.79 (0.031 |
|
|
|
|
ETC |
Piezo Ceramic Buzzer |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
|
|
|
ETC |
Magnetic transducer Buzzer q q q Low current consumption Compact Rich sound DIMENSIONS: (Unit: mm) CHARACTERISTICS: 2-PIN(P2) TYPE 4-PIN(P4) TYPE L1 TYPE L2 TYPE ELECTRICAL SPECIFICATIONS: Model No. Min. Sound Pressure Level (dB) Rated Voltage (V) Operating Voltage (V |
|
Desde 2024. D4U Semiconductor.
|