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BUZ900DP |
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| Part Number | BUZ900DP |
| Manufacturer | ETC |
| Description | MAGNA TEC 20.0 5.0 BUZ900DP BUZ901DP MECHANICAL DATA Dimensions in mm 3.3 Dia. N–CHANNEL POWER MOSFET POWER MOSFETS FOR AUDIO APPLICATIONS FEATURES 1 2.0 2 3 2.0 1.0 • HIGH SPEED SWITCHING • ... |
| Features |
1
2.0
2
3
2.0 1.0
• HIGH SPEED SWITCHING • N –CHANNEL POWER MOSFET • SEMEFAB DESIGNED AND DIFFUSED • HIGH VOLTAGE (160V & 200V) • HIGH ENERGY RATING 1.2 0.6 2.8 3.4 • ENHANCEMENT MODE • INTEGRAL PROTECTION DIODE • P –CHANNEL ALSO AVAILABLE AS BUZ905DP & BUZ906DP • DOUBLE DIE PACKAGE FOR MAXIMUM POWER AND HEATSINK SPACE 5.45 5.45 TO –3PBL Pin 1 – Gate Pin 2 – Source Case is Source Pin 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain – Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate – Source Voltage Continuous Drain Current Body Drain Diode Total Power... |
| Document |
 BUZ900DP Data Sheet
PDF 45.61KB |
Similar Datasheet
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|---|---|---|---|---|
| 1 | BUZ900 |
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| 2 | BUZ900P |
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| 3 | BUZ900X4S |
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| 6 | BUZ901 |
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Desde 2024. D4U Semiconductor.
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