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| Part Number | BUZ90 |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | BUZ90 |
| Manufacturer | Siemens Semiconductor Group |
| Title | Power Transistor |
| Description | BUZ 90 SIPMOS ® Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 90 VDS 600 V ID 4.5 A RDS(on) 1.6 Ω Package TO-220 AB Ordering Code C67078-S1321-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 4.5 Unit A ID IDpuls 18. |
| Features | min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 600 3 0.1 10 10 1.5 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 µA VDS = 600 V, VGS = 0 V, Tj = 25 °C VDS = 600 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGSS 100 nA Ω 1.6 VGS = 20 V, VDS = 0 . |
similar datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BUZ900 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET |
|
| 2 | BUZ900DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET |
|
| 3 | BUZ900P |
Magna |
N-CHANNEL POWER MOSFET |
|
| 4 | BUZ900X4S |
ETC |
N-Channel Power MOSFET |
|
| 5 | BUZ901 |
Magna |
(BUZ900 / BUZ901) N-CHANNEL POWER MOSFET |
|
| 6 | BUZ901D |
INCHANGE |
N-Channel MOSFET |
|
| 7 | BUZ901DP |
ETC |
(BUZ900DP / BUZ901DP) N-CHANNEL POWER MOSFET |
|
| 8 | BUZ901P |
Magna |
N-CHANNEL POWER MOSFET |
|
| 9 | BUZ901X4S |
ETC |
N-Channel Power MOSFET |
|
| 10 | BUZ902 |
Magna Tec |
N-Channel MOSFET |
|
Desde 2024. D4U Semiconductor.
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