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ETC |
N-Channel FET ACTE R IS TICS (TC =25 C unless otherwise noted) 4 Parameter S ymbol Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHARACTERISTICS a BVDSS VGS =0V, ID =250uA |
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ETC |
Extended Temperature Range/ E-Ultra 10/100BASE-TX SOIC-16 Magnetic Modules CT) / (1CT:1CT) (1CT:1CT) / (1CT:1CT) (2CT:1CT) / (1CT:1CT) (1CT:1CT) / (2CT:1CT) (1.25CT:1CT) / (1CT:1CT) Circuit Schematic A B B B B PRI/SEC Cw/w (pF typ) 25 25 25 25 25 PRI DCR (Ωmax) 1.0 1.0 1.3 1.3 1.3 01/01 |
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Desde 2024. D4U Semiconductor.
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