55N03L |
Part Number | 55N03L |
Manufacturer | ETC |
Description | 55N03L S eptember , 2002 N-Channel Logic Level E nhancement Mode Field E ffect Transistor 4 P R ODUC T S UMMAR Y F E AT UR E S VDS S 30V ID R DS (on) ( m W ) T Y P 12.5 @ VGS = 10V 55A 20 @ VGS = ... |
Features |
ACTE R IS TICS (TC =25 C unless otherwise noted)
4 Parameter
S ymbol Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Body Leakage
ON CHARACTERISTICS a
BVDSS VGS =0V, ID =250uA
30
IDSS VDS =24V, VGS =0V
IGSS VGS = 16V, VDS =0V
V 10 uA 100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = 250uA 1 1.5 3 V
Drain-S ource On-S tate R esistance
R DS(ON)
VGS = 10V, ID = 27A VGS = 4.5V, ID = 22A
12.5 14 m ohm 20 23 m ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS b
ID(ON) gFS
VGS = 10V, VD... |
Document |
55N03L Data Sheet
PDF 234.38KB |
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