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Diotec Semiconductor |
General Purpose PNP Transistors General Purpose Three current gain groups Compliant to RoHS, REACH, Conflict Minerals 1) Mechanical Data 1) WEEE Typische Anwendungen Signalverarbeitung, Schalten, Verstärken Standardausführung 1) Besonderheiten Universell anwendbar Drei Stromve |
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Diotec Semiconductor |
Si-Epitaxial PlanarTransistors A mA mW ˚C – 65 … + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collec |
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Diotec Semiconductor |
Si-Epitaxial PlanarTransistors A mA mW ˚C – 65 … + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collec |
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Diotec Semiconductor |
Si-Epitaxial PlanarTransistors A mA mW ˚C – 65 … + 150 200 135 K/W 1) Mounted on Al heat sink 15 mm × 25 mm × 0.5 mm. Semiconductor Group 2 BC 327 BC 328 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collec |
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Diotec Semiconductor |
Si-Epitaxial PlanarTransistors 25°C) BC337 BC338 50 V 30 V 45 V 25 V 5V 625 mW 1) 800 mA 1A 100 mA -55...+150°C -55…+150°C Characteristics (Tj = 25°C) DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hF |
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Desde 2024. D4U Semiconductor.
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