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BC338 |
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| Part Number | BC338 |
| Manufacturer | Diotec Semiconductor |
| Description | BC337 / BC338 BC337 / BC338 NPN General Purpose Si-Epitaxial Planar Transistors Si-Epitaxial Planar-Transistoren für universellen Einsatz Version 2006-05-30 Power dissipation Verlustleistung CBE... |
| Features |
25°C)
BC337
BC338
50 V
30 V
45 V
25 V
5V
625 mW 1)
800 mA
1A
100 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis 2) VCE = 1 V, IC = 100 mA Group -16 Group -25 Group -40 hFE hFE hFE VCE = 1 V, IC = 300 mA Group -16 Group -25 Group -40 hFE hFE hFE Collector-Emitter saturation voltage – Kollektor-Emitter-Sättigungsspg. 2) IC = 500 mA, IB = 50 mA VCEsat Kennwerte (Tj = 25°C) Min. Typ. Max. 100 160 250 160 250 400 250 400 630 60 130 100 200 170 320 – – – – – 0.7 V 1 Valid, if leads are kept at ambient temperat... |
| Document |
 BC338 Data Sheet
PDF 101.71KB |
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Desde 2024. D4U Semiconductor.
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