| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DC COMPONENTS |
2SB507 perature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCBO -60 Collector-Emitter Breakdown Voltage BVCEO -60 Emitter-Base Breakdown Voltage BVEBO -5 Collector Cutoff Current ICBO - ICEO - Em |
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Dc Components |
PNP Transistor nt Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BV |
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Dc Components |
PNP Transistor ff Current Collector-Emitter Saturation Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -20 - |
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Dc Components |
PNP Transistor (7.37) 1 2 3 .084(2.12) .074(1.87) .123(3.12) .113(2.87) .084(2.14) .074(1.88) .027(0.69) .017(0.43) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICB |
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DC COMPONENTS |
PNP Transistor perature unless otherwise specified) Characteristic Symbol Min Collector-Base Breakdown Volatge BVCBO -60 Collector-Emitter Breakdown Voltage BVCEO -60 Emitter-Base Breakdown Voltage BVEBO -5 Collector Cutoff Current ICBO - ICEO - Em |
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Dc Components |
PNP Transistor rature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat) VBE(on) hFE1 hFE2 fT 380µs, Duty Cycle 2% Min -70 -50 -5 35 60 - Typ 15 Max -1 -1 -1 320 - Unit V V V µA V V MHz Test Conditions IC=-10µA, IE=0 IC=-50mA, IB=0 IE=-10µA, I |
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Desde 2024. D4U Semiconductor.
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