| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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DMS Microelectronic |
Dual Operational Amplifier ● ● ● ● ● ● ● No frequency Compensation Required No latch-up Large common mode and differential voltage range Parameter tracking over temperature range Gain and phase match between amplifiers Internally frequency compensated Low noise input transisto |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 14.5 mΩ at VGS = 4.5 V, ID = 10 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging sho |
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Panasonic |
Silicon MOS-type integrated circuit 90 100 110 kHz 66 69 72 % 11 dB 40 mA/ms 0.05 0.30 0.6 mA 0.7 1.8 2.7 mA 5.1 6.0 6.6 V 4.1 5.0 5.5 V 0.5 1.0 1.5 V 2% 0.5 Hz –2.5 –1.9 –1.2 mA –2.0 –1.2 – 0.5 mA 5.7 6.2 6.6 V 10 mV 36 V 0.9 1.0 1.1 0.25 0.1 130 140 2.3 3.3 4.2 A |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 3.5 mΩ at VGS = 10 V, ID = 21 A Max rDS(on) = 4.3 mΩ at VGS = 4.5 V, ID = 19 A Advanced package and silicon combination for low rDS(on) and high efficiency SyncFETTM Schottky Body Diode MSL1 Robust Packag |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 24 A Max rDS(on) = 3.1 mΩ at VGS = 4.5 V, ID = 22 A High performance technology for extremely low rDS(on) SyncFETTM Schottky Body Diode RoHS Compliant General Description This N-Channel SyncFETTM is |
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Murata |
Digit LCD Display Process Monitors ■ Super-low loop drop: 1.8V typical, 2.0V max. ■ Self-powered, no separate supply required ■ Unipolar, Bipolar, and Positive Reading Models ■ Subminiature package—Less than 0.90” behind-the- panel depth ■ Large, 0.37"/9.4mm high, sunlight-viewable LC |
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Fairchild Semiconductor |
MOSFET General Description Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.6 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 4.5 V, ID = 22 A Low ind |
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Fairchild Semiconductor |
MOSFET Extended TJ rating to 175°C Shielded Gate MOSFET Technology Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next gene |
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Fairchild Semiconductor |
MOSFET Typical RDS(on) = 2.4 mΩ at VGS = 10V, ID = 65 A Typical Qg(tot) = 41 nC at VGS = 10V, ID = 65 A UIS Capability RoHS Compliant Qualified to AEC Q101 Applications Automotive Engine Control PowerTrain Management Solenoid and Motor Drive |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 25 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package |
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Fairchild Semiconductor |
MOSFET General Description Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on) and high efficiency This N-Channel MOSFET has been designed specifical |
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HANTRONIX |
LCD DISPLAY MODULE REV.: Z.W. 1.0 HDM3224-T SHEET 7 OF 14 DATE: 11/30/04 HANTRONIX, INC. 10080 BUBB RD. CUPERTINO, CA 95014 Q.A.: REV.: Z.W. 1.0 HDM3224-T SHEET 8 OF 14 DATE: 11/30/04 HANTRONIX, INC. 10080 BUBB RD. CUPERTINO, CA 95014 Q.A.: REV.: Z.W. |
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Fairchild Semiconductor |
N-Channel MOSFET General Description Shielded Gate MOSFET Technology Max rDS(on) = 11.5 mΩ at VGS = 10 V, ID = 11.6 A Max rDS(on) = 14.5 mΩ at VGS = 6 V, ID = 10.7 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A Low inductance packaging shorte |
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Diodes |
ASYMMETRIC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET • DIOFET utilize a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: • Low RDS(on) – minimizes conduction loss • Low VSD – reducing the losses due to body diode construction • Low Qrr – lower Qrr |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 5.6 mΩ at VGS = 10 V, ID = 15 A Max rDS(on) = 8.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 30 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A Low inductance packaging s |
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Fairchild Semiconductor |
MOSFET Q1: N-Channel Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 23 A Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 21 A Low inductance packaging shor |
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Fairchild Semiconductor |
MOSFET Max rDS(on) = 0.85 mΩ at VGS = 10 V, ID = 47 A Max rDS(on) = 1.2 mΩ at VGS = 4.5 V, ID = 38 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant General |
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HANTRONIX |
LCD DISPLAY MODULE BUBB RD. CUPERTINO, CA 95014 Q.A.: REV.: SHEET 7 OF 17 JK 1.1 HDM2432L-T-xxTF DATE: 7/22/02 HANTRONIX, INC. 10080 BUBB RD. CUPERTINO, CA 95014 Q.A.: REV.: SHEET 8 OF 17 JK 1.1 HDM2432L-T-xxTF DATE: 7/22/02 1.0 mm 52271-2090 HANTRO |
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Desde 2024. D4U Semiconductor.
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