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FDMS86255ET150 |
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| Part Number | FDMS86255ET150 |
| Manufacturer | Fairchild Semiconductor |
| Description | This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistance ... |
| Features |
Extended TJ rating to 175°C Shielded Gate MOSFET Technology
Max rDS(on) = 12.4 mΩ at VGS = 10 V, ID = 10 A Max rDS(on) = 15.5 mΩ at VGS = 6 V, ID = 8 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
General Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that incorporates Shielded Gate technology. This process has been optimized for the on-state resistan... |
| Document |
 FDMS86255ET150 Data Sheet
PDF 221.73KB |
Similar Datasheet
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| 1 | FDMS86255 |
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| 2 | FDMS86255 |
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| 4 | FDMS86252 |
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Desde 2024. D4U Semiconductor.
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