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Cystech Electonics |
N-Channel Logic Level Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free Lead Plating and Halogen-free package Symbol MTB12N03Q8 Outline SOP-8 Pin 1 G：Gate D：Drain S：Source MTB12 |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • Pb-free and Halogen-free package Symbol MTB11N03Q8 Outline Pin 1 SOP-8 G：Gate D：Drain S：Source MTB11N03Q8 CYStek |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating & Halogen-free package BVDSS ID@VGS=10V, TC=25°C RDSON@VGS=10V, ID=8A RDSON@VGS=4.5V, ID=6A 100V 10A 108mΩ(TYP) 123mΩ(TYP) Equivalent Circuit MTB100N10RKJ3 O |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package BVDSS ID @ VGS=10V, TA=25°C RDSON@VGS=10V, ID=1A RDSON@VGS=4.5V, ID=1A 250V 1.2A 722mΩ (typ.) 732mΩ (typ.) Equivalent Circuit MTBH0N25L3 G：Gate D：Drain S：So |
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Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET ID@VGS=10V, TA=70°C • Low On Resistance RDS(ON)@VGS=10V, ID=8A • Simple Drive Requirement • Low Gate Charge RDS(ON)@VGS=4.5V, ID=4A • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package 40V 18.5A 11.7A 5.6A 4.5A 16.4 |
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Cystech Electonics |
Dual P-Channel Logic Level Enhancement Mode Power MOSFET • RDS(ON)=75mΩ(max.)@VGS=-10V, ID=-3.5A • Simple drive requirement • Low on-resistance • Fast switching speed • Dual P-ch MOSFET package • Pb-free lead plating & halogen-free package Equivalent Circuit MTB60B06Q8 Outline SOP-8 G：Gate S：Source D：D |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Pb-free lead plating and Halogen-free package RDSON(TYP) VGS=-10V, ID=-15A VGS=-4.5V, ID=-12A -100V -20A -4.4A 39.5mΩ 45.3mΩ Symbol MTB050P10H8 G：Gate D：Drain S：Sour |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package -60V -3.3A 90mΩ (typ) 117mΩ (typ) Equivalent Circuit MTB080P06L3 G：Gate D：Drain S：Source Outline SOT-223 D S D G Ordering Information Device MTB080P06L3 |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Ultra High Speed Switching • Pb-free lead plating and halogen-free package Symbol MTB080P06M3 Outline SOT-89 G：Gate S：Source D：Drain G DD S Ordering Information Device MTB080P06M3-0-T2-G Package SOT-89 (Pb-free lea |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Small package outline • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080P06N6 G：Gate S：Source D：Drain Absolute Maximum Ratings (Ta=25°C) Drain-Source Voltage Gate-Source Volt |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package 250V 3.5A 1.0A 780mΩ 735mΩ Equivalent Circuit MTBH0N25J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTB |
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Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Dual N-ch MOSFET package • Pb-free lead plating & halogen-free package RDSON@VGS=4.5V, ID=4A 40V 13.4A 8.4A 16mΩ(typ) 18mΩ(typ) Equivalent Circuit MTB20A04Q8 Outline SOP-8 D2 |
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Cystech Electonics |
Dual N-Channel Enhancement Mode Power MOSFET • Low On Resistance • Simple Drive Requirement • Low Gate Charge ID@VGS=10V, TA=25°C ID@VGS=10V, TA=70°C RDS(ON)@VGS=10V, ID=2A RDS(ON)@VGS=4.5V, ID=2A • Fast Switching Characteristic • ESD protected gate • Pb-free lead plating and Halogen-free p |
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Cystech Electonics |
MTB35N04J3 • Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package RDSON(MAX) 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G：Gate D：Drain S：Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Simple drive requirement • Small package outline • ESD protected gate • Pb-free lead plating and halogen-free package Symbol MTB020N03KN3 Outline SOT-23 D G：Gate S：Source D：Drain S G Ordering Information Device Package Shipping MTB020N03K |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Low Gate Charge • Simple Drive Requirement • ESD protected gate • Pb-free lead plating package Equivalent Circuit MTB020N03KV8 Outline DFN3×3 Pin 1 G：Gate D：Drain S：Source Ordering Information Device MTB020N03KV8-0-T6-G Package DFN3×3 (Pb-fr |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET Low Gate Charge Simple Drive Requirement Repetitive Avalanche Rated Fast Switching Characteristic RoHS compliant package Symbol MTB050P10E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTB050P10E3-0-UB-S Pac |
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Cystech Electonics |
P-Channel Enhancement Mode Power MOSFET RDS(ON)@VGS=-4.5V, ID=-12A • Single Drive Requirement • Low On-resistance • Fast switching Characteristic • Pb-free lead plating and halogen-free package -100V -24A -17A -4.1A -3.3A 45 mΩ(typ) 51 mΩ(typ) Symbol MTB050P10J3 Outline TO-252(DPAK) |
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Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET • Single Drive Requirement • Low On-resistance • Fast Switching Characteristic • Dynamic dv/dt rating • Repetitive Avalanche Rated • UIS, Rg 100% tested • Pb-free Lead Plating and Halogen-free Package Symbol MTB05N03HQ8 Outline Pin 1 SOP-8 G：Gate |
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Cystech Electonics |
N- and P-channel enhancement mode power MOSFET • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080C10Q8 Outline SOP-8 D2 D2 D1 D1 G：Gate S：Source D：Drain Pin 1 G2 S2 G1 S1 Ordering Information Device |
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Desde 2024. D4U Semiconductor.
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