B35N04J3 |
Part Number | B35N04J3 |
Manufacturer | Cystech Electonics |
Description | CYStech Electronics Corp. Spec. No. : C453J3 Issued Date : 2009.03.11 Revised Date : Page No. : 1/7 N -Channel Enhancement Mode Power MOSFET MTB35N04J3 BVDSS 40V ID 12A Features • Low Gate Char... |
Features |
• Low Gate Charge • Simple Drive Requirement • RoHS compliant & Halogen-free package RDSON(MAX) 35mΩ Equivalent Circuit MTB35N04J3 Outline TO-252 G:Gate D:Drain S:Source GDS Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.1mH, ID=10A, RG=25Ω Repetitive Avalanche Energy @ L=0.05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Ra... |
Document |
B35N04J3 Data Sheet
PDF 213.20KB |
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