| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
Power Transistor BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataShe |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS ed Symbol ICBO ICEO IEBO VCE(SAT) hFE VBE hfe fhfe VF I(SB) Ratings Collector cut-off current Test Condition(s) Min 750 10 -0,8 - Typ 60 -1,5 0,8 4,5 Max -0,2 -2 -0,5 -5 -2,5 Unit mA mA mA V IE=0, VCB= -120 V IE=0, VCB= -120V, Tj= 150°C Colle |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ |
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Comset Semiconductors |
Power Transistor BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataShe |
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Comset Semiconductors |
Power Transistor BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataShe |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
Power Transistor ET SEMICONDUCTORS 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD676/A - BD678/A - BD680/A - BD682/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= - 45 V IE=0 , -VCB= - 60 V IE=0 , |
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Comset Semiconductors |
SILICON DARLINGTON POWER TRANSISTORS 651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 BD643 BD645 BD647 BD649 BD651 Value Unit IB Base Current 300 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataSheet.net/ |
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Comset Semiconductors |
Power Transistor BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 Value Unit -IB Base Current 150 mA PT Power Dissipation @ Tmb < 25° 62.5 Watts TJ Junction Temperature 150 °C -65 to +150 www.DataShe |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
Power Transistor 012 COMSET SEMICONDUCTORS 1 |3 Datasheet pdf - http://www.DataSheet4U.co.kr/ NPN BD675/A - BD677/A - BD679/A - BD681/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , VCB= 60 V IE=0 , VCB= 80 V |
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Comset Semiconductors |
Power Transistor ET SEMICONDUCTORS 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD676/A - BD678/A - BD680/A - BD682/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= - 45 V IE=0 , -VCB= - 60 V IE=0 , |
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Comset Semiconductors |
Power Transistor ET SEMICONDUCTORS 1 Datasheet pdf - http://www.DataSheet4U.co.kr/ PNP BD676/A - BD678/A - BD680/A - BD682/A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Symbol Ratings Test Condition(s) IE=0 , -VCB= - 45 V IE=0 , -VCB= - 60 V IE=0 , |
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Desde 2024. D4U Semiconductor.
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