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BD648 |
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| Part Number | BD648 |
| Manufacturer | Comset Semiconductors |
| Description | SEMICONDUCTORS BD644 – 646 – 648 – 650 – 652 SILICON DARLINGTON POWER TRANSISTORS PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220 enveloppe. They are intende... |
| Features |
BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652 BD644 BD646 BD648 BD650 BD652
Value
Unit
-IB
Base Current
150
mA
PT
Power Dissipation
@ Tmb < 25°
62.5
Watts
TJ
Junction Temperature
150 °C -65 to +150
www.DataSheet.net/
Ts
Storage Temperature range
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
RthJ-MB RthJ-A
Ratings
From junction to mounting base From junction to ambient in free air
Value
2 70
Unit
K/W K/W
18/10/2012
COMSET SEMICONDUCTORS
2|5
Datasheet pdf - http://www.DataSheet4U.co.kr/... |
| Document |
 BD648 Data Sheet
PDF 163.74KB |
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Desde 2024. D4U Semiconductor.
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