Calogic LLC 3N1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	3N172	Calogic LLC	Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2	3N165	Calogic LLC	Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . .
3	3N166	Calogic LLC	Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . .
4	3N170	Calogic LLC	N-Channel Enhancement Mode MOSFET Switch HANDLING PRECAUTIONS MOS field-effect transistors have extremely high input resistance and can be damaged by the accumulation of excess static charge. To avoid possible damage to the device while wiring, testing, or in actual operation, follow the pr
5	3N173	Calogic LLC	Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION • High Input Impedance • Diode Protected Gate PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage 3N172. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6	3N190	Calogic LLC	Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . .
7	3N191	Calogic LLC	Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier CORPORATION • Very High Input Impedance • High Gate Breakdown 3N190-3N191 • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 1) 3N190, 3N191 . . . . . . . .