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3N165 |
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| Part Number | 3N165 |
| Manufacturer | Calogic LLC |
| Description | Monolithic Dual P-Channel Enhancement Mode MOSFET General Purpose Amplifier 3N165 / 3N166 FEATURES CORPORATION • Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLU... |
| Features |
CORPORATION
• Very High Impedance • High Gate Breakdown • Low Capacitance PIN CONFIGURATION ABSOLUTE MAXIMUM RATINGS (Note 1) (TA = 25oC unless otherwise specified) Drain-Source or Drain-Gate Voltage (Note 2) 3N165. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V 3N166. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Transient Gate-Source Voltage (Note 3) . . . . . . . . . . . . . ±125 Gate-Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±80V Drain Current (Note 2) . . . . . . . . . . . . . . . . . . . ... |
| Document |
 3N165 Data Sheet
PDF 26.35KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 3N161 |
Intersil Corporation |
DIODE PROTECTED P-CHANNEL ENGANCEMENT MODE MOSFET GENERAL PUROPSE AMPLIFIER/SWITCH |
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| 2 | 3N163 |
Siliconix |
P-Channel Enhancement-Mode MOS Transistors |
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| 3 | 3N163 |
Micross |
High Speed Switch |
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| 4 | 3N164 |
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P-Channel Enhancement-Mode MOS Transistors |
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| 5 | 3N164 |
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| 6 | 3N165 |
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Amplifier |
|
Desde 2024. D4U Semiconductor.
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