CEL NE5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	NE5511279A	CEL	7.5V OPERATION SILICON RF POWER LD-MOS FET • High output power • High power added efficiency • High linear gain • Surface mount package • Single supply : Pout = 40.0 dBm TYP. (f = 900 MHz, VDS = 7.5 V, Pin = 27 dBm, IDset = 400 mA) : Pout = 40.5 dBm TYP. (f = 460 MHz, VDS = 7.5 V, Pin = 25 d
2	NE57600	Philipss	One-cell Lithium-ion battery protection with over/undercharge and overcurrent protection • Trimmed overvoltage trip point to within ±25 mV • Programmable overvoltage trip time delay • Trimmed undervoltage trip point to within ±25 mV • Very Low undervoltage sleep quiescent current 0.05 mA • Discharge overcurrent cutoff • Low operating cu
3	NE57607	Philipss	Two-cell Lithium-ion battery protection with overcurrent / over- and under-voltage protection • Trimmed overvoltage trip point to within ±25 mV • Programmable overvoltage trip time delay • Trimmed undervoltage trip point to within ±25 mV • Very low undervoltage sleep quiescent current 0.05 mA • Discharge overcurrent cutoff • Low operating cu
4	NE57611	Philipss	Single cell Li-ion battery charger • 30 mV per cell charging accuracy from 0 °C to +50 °C • Low quiescent current (250 µA – ON; 2 µA – OFF) • Undervoltage precharge detector • Self-discharge maintenance charging SIMPLIFIED SYSTEM DIAGRAM BC807 10 kΩ BAL74 APPLICATIONS • Cellular te
5	NE57611BDH	Philipss	Single cell Li-ion battery charger • 30 mV per cell charging accuracy from 0 °C to +50 °C • Low quiescent current (250 µA – ON; 2 µA – OFF) • Undervoltage precharge detector • Self-discharge maintenance charging SIMPLIFIED SYSTEM DIAGRAM BC807 10 kΩ BAL74 APPLICATIONS • Cellular te
6	NE55410GR	CEL	N-CHANNEL SILICON POWER LDMOS FET • Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package • Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDse