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| Distributor | Stock | Price | Buy |
|---|
NE55410GR |
| Part Number | NE55410GR |
| Manufacturer | CEL |
| Title | N-CHANNEL SILICON POWER LDMOS FET |
| Description | The NE55410GR is an N-channel enhancement-mode LDMOS FET designed for driver 0.1 to 2.6 GHz PA, such as, cellular base station amplifier, analog/digital TV-transmitters, and the other PA’s. This product has two different FET's on one die manufactured using our NEWMOS technology (our WSi gate lateral. |
| Features |
• Two different FET’s (Q1 : Pout = 2 W, Q2 : Pout = 10 W) in one package • Over 25 dB gain available by connecting two FET’s in series : GL (Q1) = 13.5 dB TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) : GL (Q2) = 11.0 dB TYP. (VDS = 28 V, IDset (Q2) = 100 mA, f = 2 140 MHz) • High 1 dB compression output power : PO (1 dB) (Q1) = 35.4 dBm TYP. (VDS = 28 V, IDset (Q1) = 20 mA, f = 2 140 MHz) . |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE5500179A |
NEC |
OPERATION SILICON RF POWER MOSFET |
|
| 2 | NE5510179A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 3 | NE5510279A |
NEC |
3.5V OPERATION SILICON RF POWER MOSFET |
|
| 4 | NE5511279A |
NEC |
7.5 V UHF BAND RF POWER SILICON LD-MOS FET |
|
| 5 | NE5511279A |
CEL |
7.5V OPERATION SILICON RF POWER LD-MOS FET |
|
| 6 | NE5512 |
Philips |
Dual high-performance operational amplifier |
|
| 7 | NE5512D |
Philips |
Dual high-performance operational amplifier |
|
| 8 | NE5512N |
Philips |
Dual high-performance operational amplifier |
|
| 9 | NE5514 |
Philips |
Quad high-performance operational amplifier |
|
| 10 | NE5514D |
Philips |
Quad high-performance operational amplifier |
|
Desde 2024. D4U Semiconductor.
|