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SILICON PLANAR EPITAXIAL TRANSISTORS al power dissipation up to Tamb = 25 °C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j –t + Rth t –s + Rth s –a) + Tamb Thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector –emitter break |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS .com CMBT4401 THERMAL RESISTANCE From junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector –emitter breakdown voltage IC = 1.0 mA; IB = 0 Collector –base breakdown voltage IC = 100 µA; IE = 0 Emitter –base breakdown vo |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS open collector) Collector current (d.c.) Total power dissipation* up to Tamb = 25 °C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j –t + Rth t –s + Rth s –a) + Tamb Thermal resistance from junction to ambient –VCB0 –VCE0 –VEB0 –IC Ptot Tstg |
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CDIL |
(CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS TA = 25°C unless otherwise specified) Limiting values Collector –base voltage (open emitter) VCBO Collector –emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Ptot* Total power dissipation up to Ta |
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CDIL |
(CMBT8098 / CMBT8099) TRANSISTORS .) 99.5% alumina. ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) DESCRIPTION Collector Base Voltage SYMBOL VCBO TEST CONDITION IC=100µA, IE=0 CMBT8098 CMBT8099 IC=10mA, IB=0 CMBT8098 CMBT8099 IE=10µA, IC=0 VCE=60V, IB=0 CMBT8098 VCB |
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CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS voltage (open emitter) Collector –emitter voltage (open base) Emitter –base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature °C Junction temperature THERMAL RESISTANCE Tj = P (Rth j –t + R |
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CDIL |
(CMBT3903 / CMBT3904) SILICON PLANAR EPITAXIAL TRANSISTORS voltage (open emitter) Collector –emitter voltage (open base) Emitter –base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature °C Junction temperature THERMAL RESISTANCE Tj = P (Rth j –t + R |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS V mA mW Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4123 Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal resistance from junction to ambient Tstg Tj |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS Tj max. 30 max. 25 max. 5 max. 200 max 225 –55 to +150 max. 150 V V V mA mW °C °C Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT4124 THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal resistanc |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS rent (d.c.) Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal resistance from junction to ambient –V EBO –IC Ptot Tstg Tj max. 4 max. 200 max 350 –55 to |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS al power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal resistance from junction to ambient Ptot Tstg Tj max 350 –55 to +150 max. 150 mW °C °C Rth j –a 556 °C |
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CDIL |
(CMBT5088 / CMBT5089) SILICON PLANAR EPITAXIAL TRANSISTORS TA = 25°C unless otherwise specified) Limiting values Collector –base voltage (open emitter) VCBO Collector –emitter voltage (open base) VCEO Emitter-base voltage (open collector) VEBO Collector current (d.c.) IC Ptot* Total power dissipation up to Ta |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS Page 1 of 3 www.datasheet4u.com CMBT5400 Total power dissipation at Tamb = 25°C Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal resistance from junction to ambient Ptot Tstg Tj max 250 |
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CDIL |
SILICON PLANAR EPITAXIAL TRANSISTORS Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT5401 Total power dissipation up to Tamb = 25°C Junction temperature Storage temperature THERMAL RESISTANCE from junction to ambient Ptot Tj Tstg max 250 mW max. 150 ° C –55 to +150 ° C Rt |
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TRANSISTORS 1 of 3 www.datasheet4u.com CMBT5551 Collector current Total power dissipation up to Tamb = 25 °C Junction temperature Storage temperature range THERMAL RESISTANCE from junction to ambient IC Ptot Tj Tstg max. 600 max 250 max. 150 –55 to +150 m |
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TRANSISTORS 350 max. 350 max. 5 max. 500 max 225 –55 to +150 max. 150 V V V mA mW °C °C Continental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT6517 THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal resistance from |
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(CMBT8098 / CMBT8099) TRANSISTORS .) 99.5% alumina. ELECTRICAL CHARACTERISTICS (Ta=25º C unless specified otherwise) DESCRIPTION Collector Base Voltage SYMBOL VCBO TEST CONDITION IC=100µA, IE=0 CMBT8098 CMBT8099 IC=10mA, IB=0 CMBT8098 CMBT8099 IE=10µA, IC=0 VCE=60V, IB=0 CMBT8098 VCB |
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TRANSISTORS ic Characteristics ft VCE=6V,IC=10mA, 200 Transition Frequency Cob VCB=6V, IE=0 2.5 Collector Output Capacitance f=1MHz NF VCE=6V, IE=0.1mA Noise Figure f=1kHz, Rg=2kohms CLASSIFICATION E F G hFE(1) 150-300 250-500 400-800 MARKING NE NF NG MAX 100 1 |
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TRANSISTORS 0mA Base Emitter Saturation Voltage Dynamic Characteristics ft VCE=6V,IC=10mA, 200 Transition Frequency Cob VCB=6V, IE=0 4.0 Collector Output Capacitance f=1MHz NF VCE=6V, IE=0.3mA Noise Figure f=100Hz, Rg=10kohms CLASSIFICATION E F hFE(1) 150-300 25 |
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(CMBT8598 / CMBT8599) TRANSISTORS ntinental Device India Limited Data Sheet Page 1 of 3 www.datasheet4u.com CMBT8598 CMBT8599 Total power dissipation at Tamb = 25°C Ptot Storage temperature Junction temperature THERMAL CHARACTERISTICS Tj = P (Rth j –t + Rth s –a) + Tamb Thermal re |
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Desde 2024. D4U Semiconductor.
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