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CMBT3906 |
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| Part Number | CMBT3906 |
| Manufacturer | CDIL |
| Description | Continental Device India Limited An www.datasheet4u.com ISO/TS16949 and ISO 9001 Certified Company SOT-23 Formed SMD Package CMBT3906 SILICON EPITAXIAL TRANSISTOR P–N–P transistor Marking CMBT3906... |
| Features |
al power dissipation up to Tamb = 25 °C Storage temperature THERMAL CHARACTERISTICS Tj = P(Rth j –t + Rth t –s + Rth s –a) + Tamb Thermal resistance from junction to ambient CHARACTERISTICS Tamb = 25 °C unless otherwise specified Collector –emitter breakdown voltage –IC = 1 mA; lB = 0 Collector –base breakdown voltage –IC = 10µA; IE = 0 Emitter –base breakdown voltage —IE = 10 µA; IC = 0 Collector cut –off current –VCE = 30 V; –VEB = 3 V Base current with reverse biased emitter junction Output capacitance at f = 100 kHz IE = 0; –VCB = 5 V Input capacitance at f = 100 kHz IC = 0; –VBE = 0,5 V Saturati... |
| Document |
 CMBT3906 Data Sheet
PDF 96.20KB |
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