CDIL BC8 Hoja de datos

No.	parte #	Fabricante	Descripción
1	BC846B	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
2	BC856	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
3	BC857	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
4	BC858	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
5	BC856W	CDIL	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
6	BC857W	CDIL	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
7	BC808	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS n collector) –VEB0 BC807 max. 50 max. 45 max. 5 BC808 30 V 25 V 5V Collector current (DC) Collector current (peak value) Emitter current (peak value) Base current (DC) Base current (peak value) Total power dissipation at Tamb = 25 °C * Storage te
8	BC846	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
9	BC846A	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
10	BC847C	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
11	BC848	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
12	BC808-40	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
13	BC808-25	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
14	BC808-16	CDIL	SILICON PLANAR EPITAXIAL TRANSISTORS
15	BC858W	CDIL	PNP SILICON PLANAR EPITAXIAL TRANSISTORS
16	BC847	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
17	BC847A	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
18	BC847B	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
19	BC848A	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite
20	BC848B	CDIL	NPN SILICON PLANAR EPITAXIAL TRANSISTORS 200 200 200 250 - 55 to +150 150 THERMAL RESISTANCE From junction to ambient Rth(j-a) * 500 **Mounted on a ceramic substrate of 8mm x 10 mm x 0.7mm UNITS V V V V mA mA mA mW ºC ºC K/W BC846_848Rev_2 170407E Continental Device India Limite