Busque con el número de pieza junto con el fabricante o la descripción
| Distributor | Stock | Price | Buy |
|---|
BC857 |
| Part Number | BC857 |
| Manufacturer | GME |
| Title | PNP Transistor |
| Description | PNP general purpose Transistor FEATURES Low current.(max.100mA). Low voltage.. Pb Lead-free Production specification BC856/857/858 APPLICATIONS General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BC856A/B BC857A/B/C BC858A/B/C 3A/3B 3E/3F/3G 3J/3K/3L SO. |
| Features |
Low current.(max.100mA). Low voltage.. Pb Lead-free Production specification BC856/857/858 APPLICATIONS General purpose switching and amplification. ORDERING INFORMATION Type No. Marking BC856A/B BC857A/B/C BC858A/B/C 3A/3B 3E/3F/3G 3J/3K/3L SOT-23 Package Code SOT-23 SOT-23 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value VCBO VCEO Collector-Ba. |
BC857 |
| Part Number | BC857 |
| Manufacturer | Kingtronics |
| Title | PNP Silicon Epitaxial Transistors |
| Description | BC856~BC859 PNP Silicon Epitaxial Transistors For switching and amplifier applications 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25℃) PARAMETER SYMBOL Collector Base Voltage BC856 BC857 BC858, BC859 -VCBO Collector Emitter Voltage BC856 BC857 BC858,. |
| Features | . |
BC857 |
| Part Number | BC857 |
| Manufacturer | AUK corp |
| Title | PNP Silicon Transistor |
| Description | • General purpose application • Switching application Features • High voltage : VCEO=-45V • Complementary pair with BC847 Ordering Information Type NO. BC857 Marking UA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1. |
| Features |
• High voltage : VCEO=-45V • Complementary pair with BC847 Ordering Information Type NO. BC857 Marking UA : hFE rank Package Code SOT-23 Outline Dimensions 2.4±0.1 1.30±0.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 0.38 -0.03 +0.05 2.9±0.1 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2010-000 0.124 1 BC857 Absolute maximum ratings Characteristic C. |
BC857 |
| Part Number | BC857 |
| Manufacturer | Diotec Semiconductor |
| Title | SMD General Purpose PNP Transistors |
| Description | BC856 ... BC860 BC856 ... BC860 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2015-05-12 2.9 ±0.1 0.4+0.1 -0.05 3 Type Code 2.4 ±0.2 1.3±0.1 1.1+0.1 -0.2 Power dissipation – Verlustleistung Plastic case K. |
| Features |
- VCEO - VCBO - VEBO
Ptot - IC - ICM Tj TS
Grenzwerte (TA = 25°C)
BC856
BC857 BC860
BC858 BC859
65 V
45 V
30 V
80 V
50 V
30 V
5V
250 mW 1)
100 mA
200 mA
-55...+150°C -55…+150°C
Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis - VCE = 5 V, - IC = 10 µA Group A Group B Group C HFE hFE hFE - VCE = 5 V, - IC = 2 mA Group A Group B Group C HFE hFE hFE. |
BC857 |
| Part Number | BC857 |
| Manufacturer | KEC |
| Title | EPITAXIAL PLANAR PNP TRANSISTOR |
| Description | SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION . FEATURES For Complementary With NPN Type BC846/847/848. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING BC856 -80 Collector-Base Voltage BC857 VCBO -50 BC858 -30 Collector-Emitter Voltage BC856 BC857 . |
| Features | For Complementary With NPN Type BC846/847/848. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING BC856 -80 Collector-Base Voltage BC857 VCBO -50 BC858 -30 Collector-Emitter Voltage BC856 BC857 BC858 VCEO -65 -45 -30 BC856 -5 Emitter-Base Voltage BC857 BC858 VEBO -5 -5 Collector Current Emitter Current Collector Power Dissipation Junction Temperature Storage Temperature Ran. |
BC857 |
| Part Number | BC857 |
| Manufacturer | WEITRON |
| Title | General Purpose Transistor |
| Description | BC856A/B-BC857A/B/C BC858A/B/C-BC859B/C General Purpose Transistor PNP Silicon COLLECTOR 3 1 BASE 2 EMITTER Maximum Ratings ( TA=25 C unless otherwise noted) 3 1 2 SOT-23 MARKING DIAGRAM 3 XX = Device Code (See 1 2 Table Below) Rating Collector-Emitter Voltage BC856 BC857 BC858,BC859 Coll. |
| Features | aracteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Typ Max Unit Off Characteristics Collector-Emitter Breakdown Voltage (IC= -10mA) BC856 Series BC857 Series V(BR)CEO -65 -45 - -V - BC858, BC859 Series -30 - - Collector-Emitter Breakdown Voltage (IC=-10 µA ,VEB=0) BC856 Series BC857 Series V(BR)CES -80 -50 - -V - BC858, BC859 Series -30 - - Collector-B. |
BC857 |
| Part Number | BC857 |
| Manufacturer | RECTRON |
| Title | PNP Silicon Planar Epitaxial Transistors |
| Description | Collector Base Voltage Collector Emmitter Voltage (+VBE = 1V) Collector Emitter Voltage Emitter Base Voltage Collector Current (DC) Collector Current - Peak Emitter Current - Peak Base Current - Peak Total power dissipation up to Tamb = 60 oC Storge Temperature Junction Temperature SYMBOL VCBO VCEX. |
| Features | ON Collector Cut Off Current Base Emitter On Voltage Collector Emitter Saturation Voltage Base Emitter Saturation Voltage Knee Voltage DC Current Gain SYMBOL TEST CONDITION ICBO VCB = 30V, IE = 0 VCB = 30V, IE = 0, Tj = 150oC VBE(on)* IC = 2mA, VCE = 5V IC = 10mA, VCE = 5V VCE(Sat) IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VBE(Sat)*** IC = 10mA, IB = 0.5mA IC = 100mA, IB = 5mA VCEK IC . |
BC857 |
| Part Number | BC857 |
| Manufacturer | TAITRON |
| Title | SMD Transistor |
| Description | Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range BC856 BC857 BC858 Unit Conditions 80 50 30 V 65 45 30 V 555 V 100 mA 350 mW Note 1 150 ° C -55 to +150 °C Note: 1. Package mounted on . |
| Features |
• PNP Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable per MIL-STD-202G, Method 208 0.008 gram SMD General Purpose Transistor (PNP) BC856/BC857/BC858 SOT-23 Marking Information Marking Code BC856A 3A BC856B 3B BC857A 3E BC857B 3F BC857C 3G BC858A 3J BC858B 3K BC858C 3L Maximum Rat. |
BC857 |
| Part Number | BC857 |
| Manufacturer | nexperia |
| Title | PNP Transistor |
| Description | PNP general-purpose transistors in a small SOT23 (TO-236AB), Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package Nexperia BC856 SOT23 BC856A BC856B BC857 BC857A BC857B BC857C BC858B JEDEC TO-236AB NPN complement BC846 BC846A BC846B BC847 BC847A. |
| Features |
and benefits
• Low current (max. 100 mA) • Low voltage (max. 65 V) 3. Applications • General-purpose switching and amplification Nexperia BC856; BC857; BC858 65 V, 100 mA PNP general-purpose transistors 4. Quick reference data Table 2. Quick reference data Tamb = 25 °C unless otherwise specified. Symbol Parameter VCEO collector-emitter voltage BC856; BC856A; BC856B BC857; BC857A; BC857B;. |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | BC850 |
Kexin |
NPN Transistors |
|
| 2 | BC850 |
LGE |
Transistor |
|
| 3 | BC850 |
NXP |
NPN general purpose transistors |
|
| 4 | BC850 |
Fairchild Semiconductor |
NPN EPITAXIAL SILICON TRANSISTOR |
|
| 5 | BC850 |
Diotec Semiconductor |
Surface mount Si-Epitaxial PlanarTransistors |
|
| 6 | BC850 |
KEC |
EPITAXIAL PLANAR NPN TRANSISTOR |
|
| 7 | BC850 |
UTC |
NPN SILICON TRANSISTOR |
|
| 8 | BC850 |
Pan Jit International |
NPN GENERAL PURPOSE TRANSISTORS |
|
| 9 | BC850 |
SEMTECH |
NPN Silicon Epitaxial Transistor |
|
| 10 | BC850 |
ON Semiconductor |
NPN Transistor |
|
Desde 2024. D4U Semiconductor.
|