Bourns Electronic Solutions BU Hoja de datos

No.	parte #	Fabricante	Descripción
1	BUX84	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR BUX84 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-o
2	BU48A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°
3	BU426A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS EPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter su
4	BUX85	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR X85 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob NOTES: 2. 3. 4. 5. Collector-emitter sustaining voltage Collector-emitter cut-off
5	CAY17	Bourns Electronic Solutions	Bussed Resistor Array ■ ■ ■ ■ JA version available to 100K ohms 10 pin with 8 resistors in bussed type for pull up/down circuit Lead free version available (see How to Order “Termination” options) RoHS compliant* ■ ■ ■ ■ ■ Convex termination style Resistance tolerance
6	BU406	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS PTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter break
7	BU426	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS EPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU426, BU426A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) Collector-emitter su
8	BU47	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V
9	BU47A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V
10	BU48	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV48, BUV48A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°
11	BUL770	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 JULY 1991 - REVISED
12	BUL791	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 4 8 14 2.5 3.5 75 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C PRODUCT DataSheet 4 U .com INFORMATION 1 JULY 1991 - REVISED
13	BUT11	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTOR aSheet4U.com BUT11 NPN SILICON POWER TRANSISTOR electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER VCEO(sus) ICES IEBO hFE VCE(sat) VBE(sat) ft Cob Collector-emitter sustaining voltage Collector-emitter cut-off cu
14	BUV47	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V
15	BU407	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS PTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BU406, BU407 NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V(BR)CEO Collector-emitter break
16	BUV47A	Bourns Electronic Solutions	NPN SILICON POWER TRANSISTORS ON 1 AUGUST 1978 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice. www.DataSheet4U.com BUV47, BUV47A NPN SILICON POWER TRANSISTORS electrical characteristics at 25°C case temperature (unless otherwise noted) PARAMETER V