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BUL770 |
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| Part Number | BUL770 |
| Manufacturer | Bourns Electronic Solutions |
| Description | www.DataSheet4U.com BUL770 NPN SILICON POWER TRANSISTOR ● ● ● ● ● Designed Specifically for High Frequency Electronic Ballasts up to 50 W hFE 7 to 21 at VCE = 1 V, IC = 800 mA Low Power Losses (On-... |
| Features |
for tp = 300 µs, duty cycle ≤ 2%. SYMBOL VCES VCBO V CEO VEBO IC ICM ICM IB IBM Ptot Tj Tstg VALUE 700 700 400 9 2.5 6 8 1.5 2.5 50 -65 to +150 -65 to +150 UNIT V V V V A A A A A W °C °C
PRODUCT
DataSheet 4 U .com
INFORMATION
1
JULY 1991 - REVISED SEPTEMBER 2002 Specifications are subject to change without notice.
www.DataSheet4U.com
BUL770 NPN SILICON POWER TRANSISTOR
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER V CEO(sus) ICES IEBO V BE(sat) VCE(sat) Collector-emitter sustaining voltage Collector-emitter cut-off current Emitter cut-off current ... |
| Document |
 BUL770 Data Sheet
PDF 259.11KB |
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Desde 2024. D4U Semiconductor.
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