Agilent 1N5 Hoja de datos

No.	parte #	Fabricante	Descripción
1	1N5711	Agilent	Schottky Barrier Diodes • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes
2	1N5719	Agilent	PIN Diodes • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matric
3	1N5767	Agilent	PIN Diodes • Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matric
4	1N5712	Agilent	Schottky Barrier Diodes • Low Turn-On Voltage As Low as 0.34 V at 1 mA • Pico Second Switching Speed • High Breakdown Voltage Up to 70 V • Matched Characteristics Available Description/Applications The 1N5711, 1N5712, 5082-2800/ 10/11 are passivated Schottky barrier diodes