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1N5767 |
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| Part Number | 1N5767 |
| Manufacturer | Agilent |
| Description | Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filte... |
| Features |
• Low Harmonic Distortion • Large Dynamic Range • Low Series Resistance • Low Capacitance Description/Applications These general purpose switching diodes are intended for low power switching applications such as RF duplexers, antenna switching matrices, digital phase shifters, and time multiplex filters. The 5082-3188 is optimized for VHF/UHF bandswitching. The RF resistance of a PIN diode is a function of the current flowing in the diode. These current controlled resistors are specified for use in control applications such as variable RF attenuators, automatic gain control circuits, RF modul... |
| Document |
 1N5767 Data Sheet
PDF 193.33KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 1N5760 |
ETC |
SILICON 3-LAYER BILATERAL TRIGGERS |
|
| 2 | 1N5760A |
ETC |
SILICON 3-LAYER BILATERAL TRIGGERS |
|
| 3 | 1N5761 |
ETC |
SILICON 3-LAYER BILATERAL TRIGGERS |
|
| 4 | 1N5761A |
ETC |
SILICON 3-LAYER BILATERAL TRIGGERS |
|
| 5 | 1N5762 |
ETC |
SILICON 3-LAYER BILATERAL TRIGGERS |
|
| 6 | 1N5762A |
ETC |
SILICON 3-LAYER BILATERAL TRIGGERS |
|
Desde 2024. D4U Semiconductor.
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