Advanced Semiconductor AT1 Hoja de datos

No.	parte #	Fabricante	Descripción
1	ASAT10	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR • Input Matching Network • • Omnigold™ Metalization System D C L B M F E G MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O H I J K 2.3 A DIM MINIMUM inches / mm MAXIMUM inches / mm 45 V 15 V 3.5 V 29 W @ TC = 25 C -65 C to +200 C -6
2	ASAT15	Advanced Semiconductor	NPN SILICON RF POWER TRANSISTOR • • • Omnigold™ Metalization System D C L B M F E G H J I MAXIMUM RATINGS IC VCBO VCEO VEBO PDISS TJ TSTG θ JC O K 3.0 A 45 V 15 V 3.0 V 37.2 W -65 OC to +200 OC -65 C to +150 C 4.7 OC/W O DIM A B C D E F G H I J K L M MINIMUM inches / mm
3	AT12020-21	Advanced Semiconductor	SILICON ABRUPT VARACTOR DIODE INCLUDE: • High Tuning Ratio, ∆CT = 10 MIN. • High Quality Factor, Q = 300 MIN. • Hermetic Package, CP = .20 pF LS = .42 nH PACKAGE STYLE 21 MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 7
4	AT12015-21	Advanced Semiconductor	SILICON ABRUPT VARACTOR DIODE INCLUDE: • High Tuning Ratio, ∆CT = 8.5 MIN. • High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O NONE
5	AT12016-21	Advanced Semiconductor	SILICON ABRUPT VARACTOR DIODE INCLUDE: • High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH • High Tuning Ratio, ∆CT = 9.0 MIN. MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W NONE O O O O C
6	AT12017-21	Advanced Semiconductor	SILICON ABRUPT VARACTOR DIODE INCLUDE: • High Tuning Ratio, ∆CT = 9.5 MIN. • High Quality Factor, Q = 300 MIN. • Hermetic Package, CP = .20 pF LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O CH