AT12015-21 |
Part Number | AT12015-21 |
Manufacturer | Advanced Semiconductor |
Description | The AT12015-21 is Designed for High Performance RF and Microwave Applications Requiring an Abrupt Variable Capacitance Characteristic. PACKAGE STYLE 21 FEATURES INCLUDE: • High Tuning Ratio, ∆CT = ... |
Features |
INCLUDE:
• High Tuning Ratio, ∆CT = 8.5 MIN. • High Quality Factor, Q = 300 MIN. CP = .20 pF • Hermetic Pkg, LS = .42 nH MAXIMUM RATINGS IF VR PDISS TJ TSTG θJC O O 200 mA 120 V 1.75W @ TC 25 C -55 C to +150 C -55 C to +150 C 70 C/W O O O O NONE CHARACTERISTICS SYMBOL VR VF IR CT ∆ CT Q RS IR = 10 µA IF = 1 mA VR = 100 V VR = 4 V CT0/ CT120 VR = 4 V IF = 10 mA TC = 25 C O TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 120 1.0 100 f = 1.0 MHz f = 1.0 MHz f = 50 MHz f = 2400 MHz 12 8.5 300 0.9 UNITS V V nA pF ----Ω 14 16 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • ... |
Document |
AT12015-21 Data Sheet
PDF 50.72KB |
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