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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS • • • • • • • 1090 MHz 25:1 VSWR CAPABILITY POUT = 600 WATTS GP = 6.0 dB MINIMUM GOLD METALIZATION INPUT MATCHING COMMON BASE CONFIGURATION DESCRIPTION: The MSC1600M is a high power pulsed transistor specifically designed for IFF avionics applicatio |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 1.0 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4001 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and ca |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and ca |
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Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS • 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 0.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4000 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and ca |
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Advanced Power Technology |
RF & MICROWAVE TRANSISTORS GENERAL PURPOSE LINEAR APPLICATIONS • • • • • 2.0 GHz CLASS A LINEAR OPERATION 20:1 VSWR CAPABILITY @ RATED CONDITIONS POUT = 20.5 dBm MINIMUM COMMON EMITTER CONFIGURATION DESCRIPTION: The MSC80064 is a hermetically sealed NPN power transistor specifically designed for Class A linear |
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Desde 2024. D4U Semiconductor.
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