Busque con el número de pieza junto con el fabricante o la descripción
MSC4003 |
Click to view a larger image
| Part Number | MSC4003 |
| Manufacturer | Advanced Power Technology |
| Description | The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is ... |
| Features |
• 3:1 VSWR AT RATED CONDITIONS • HERMETIC STRIPAC® PACKAGE • POUT = 2.5 W MIN. WITH 5.0 dB GAIN AT 4.0 GHz DESCRIPTION: The MSC4003 common-base, hermetically sealed silicon NPN microwave power transistor features a unique Microgrid™ structure and can withstand 3:1 VSWR at any phase angle under rated conditions. It is designed for Class C amplifier applications in the 2.0 – 4.4 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (TCASE = 25°C) Symbol Parameter PDISS IC VCC TJ TSTG Power Dissipation* Device Current* Collector Supply Voltage* Junction Temperature (Pulsed RF Operation) Storage Tem... |
| Document |
 MSC4003 Data Sheet
PDF 185.51KB |
Similar Datasheet
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | MSC4000 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 2 | MSC4001 |
Advanced Power Technology |
RF AND MICROWAVE TRANSISTORS |
|
| 3 | MSC400SMA330B4 |
Microchip |
SiC N-Channel Power MOSFET |
|
| 4 | MSC4606W |
MORESEMI |
P & N-Channel Power MOSFET |
|
| 5 | MSC4953W |
MORESEMI |
Dual P-Channel MOSFET |
|
| 6 | MSC4963W |
MORESEMI |
Dual P-Channel Enhancement Mode Power MOS FET |
|
Desde 2024. D4U Semiconductor.
|