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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET sed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 100 +20 37 23 120 89.2 2 -55 to 150 -55 to 150 V V A A A W W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maximum The |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET n Current1 Total Power Dissipation +20 V 56 A 40 A 160 A 125 W PD@TA=25℃ TSTG TJ Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 2 -55 to 175 -55 to 175 W ℃ ℃ Thermal Data Symbol Parameter Rthj-c Maxim |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 1.2 40 Units ℃/W ℃/W 1 201103111 Data and specifications subje |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 4.5V3 Drain Current, VGS @ 4.5V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range +12 2.1 1.7 10 1.38 -55 to 150 -55 to 150 V A A A W ℃ ℃ Thermal Data Symbol Rthj-a Parameter Maximum T |
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Advanced Power Electronics |
N-Channel MOSFET e Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Single Pulse Avalanche Energy4 Storage Temperature Range Operating Junction Temperature Range 500 +20 8.6 5.4 34 31.3 1.92 18 |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode G C E C VCES IC TO-3P G Absolute Maximum Ratings Symbol Parameter VCES VGE IC@TC=25oC IC@TC=100oC ICM IF@TC=25oC IF@TC=100oC PD@TC=25oC T |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ent, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 100 +20 37 23 120 89.2 3.125 -55 to 150 -55 to 150 V V A A A W W ℃ ℃ Thermal Data Symbol Paramete |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET n Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient (PCB mount) 3 Value 3. |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET |
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Advanced Power Electronics |
DUAL N-CHANNEL ENHANCEMENT MODE POWER MOSFET rent, VGS @ 10V3 Pulsed Drain Current1 +20 V 2.5 A 2A 10 A PD@TA=25℃ Total Power Dissipation 2W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Maxim |
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Advanced Power Electronics |
N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ce Voltage Gate-Source Voltage Drain Current, VGS @ 10V3 Drain Current, VGS @ 10V3 Pulsed Drain Current1 Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 100 -100 +20 +20 2.5 -2.5 2.0 -2.0 10 -10 2 -55 to 150 -5 |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET n Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range 100 +20 21.8 13.8 80 31.3 1.92 -55 to 150 -55 to 150 V V A A A W W ℃ |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Un |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET ear Derating Factor Storage Temperature Range Operating Junction Temperature Range -55 to 150 -55 to 150 Thermal Data Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Un |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=2.6V@IC=33A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free VCES IC 600V 45A C G C E TO-3P G E Absolute Maximum Ratings S |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ. =2.5V@IC=40A ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C VCES IC 600V 40A C G C E TO-3P G E Absolute Maximum Ratings Symbol VCES VGE IC@TC=25oC IC@ |
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Advanced Power Electronics |
N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR ▼ High Speed Switching ▼ Low Saturation Voltage VCE(sat),Typ.=1.85V@IC=45A ▼ Built-in Fast Recovery Diode ▼ RoHS Compliant & Halogen-Free N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR C VCES IC 600V 45A C G C E TO-3P G E Absolute Maximum Ratings |
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Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET 5 Total Power Dissipation Total Power Dissipation Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Maximum Thermal Resistance, Junction-case Maximum Thermal Resistance, Junction-ambient Valu |
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Desde 2024. D4U Semiconductor.
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