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AP50L02S |
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| Part Number | AP50L02S |
| Manufacturer | Advanced Power Electronics |
| Description | The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-263 package is univers... |
| Features |
ear Derating Factor Storage Temperature Range Operating Junction Temperature Range
-55 to 150 -55 to 150
Thermal Data
Symbol Rthj-case Rthj-amb Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 2.8 62 Unit ℃/W ℃/W
Data & specifications subject to change without notice
200218032
datasheet pdf - http://www.DataSheet4U.net/
AP50L02S/P
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol BVDSS
ΔBVDSS/ΔTj
Parameter Drain-Source Breakdown Voltage
Test Conditions VGS=0V, ID=250uA
Min. 25 1 -
Typ. 0.037
Max. Units 17 35 3 1 25 ±1... |
| Document |
 AP50L02S Data Sheet
PDF 144.72KB |
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