| No. | parte # | Fabricante | Descripción | Hoja de Datos |
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Vanguard Semiconductor |
N-Channel Advanced Power MOSFET N-Channel，3.3V Logic Level Control Low RDS(on) and High Efficiency Fast Switching Enhancement mode 100% Avalanche test Pb-free lead plating; RoHS compliant VSE008NE2LS 25V/55A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V |
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Advanced |
NPN SILICON HI FREQUNCY TRANSISTOR INCLUDE: • High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C/W 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTE |
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Desde 2024. D4U Semiconductor.
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