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NE21935 |
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| Part Number | NE21935 |
| Manufacturer | Advanced |
| Description | The ASI NE21935 is Designed for general purpose and small signal amplifier and oscillator applications up to 6.0 GHz. PACKAGE STYLE .100 4L PILL FEATURES INCLUDE: • High frequency 8.0 GH • Low nois... |
| Features |
INCLUDE:
• High frequency 8.0 GH • Low noise, 1 dB at 0.5 GHz. MAXIMUM RATINGS: IC VCBO VCEO VEBO PDISS TJ TSTG θJC 80 mA 20 V 10 V 1.5 V 580 mW @ TA = 25 °C -65 °C to +200 °C -65 °C to +200 °C 80 °C/W 1 = BASE 3 = COLLECTOR 2& 4 = EMITTER CHARACTERISTICS SYMBOL ICBO IEBO hFE CCB fT |S21E| TC = 25 °C TEST CONDITIONS VCB = 8.0 V VEB = 1.0 V VCE = 8.0 V VCB = 8.0 V VCE = 8.0 V VCE = 8.0 V IC = 20 mA IC = 20 mA f = 1.0 GHz f = 2.0 GHz IC = 20 mA f = 1.0 MHz MINIMUM TYPICAL MAXIMUM 1.0 1.0 30 100 0.4 8.0 15.5 8.0 9.0 300 1.0 UNITS µA µA --pF GHz dB A D V A N C E D S E M I C O N D U C T O R,... |
| Document |
 NE21935 Data Sheet
PDF 35.71KB |
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | NE21935 |
NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 2 | NE21937 |
NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 3 | NE219 |
NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 4 | NE21903 |
NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 5 | NE21908 |
NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
| 6 | NE21912 |
NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
|
Desde 2024. D4U Semiconductor.
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