WSBE8536 |
Part Number | WSBE8536 |
Manufacturer | Vishay (https://www.vishay.com/) |
Description | www.vishay.com WSBE Series Vishay Dale Power Metal Strip® Shunt Resistor, Low TCR (Down to < ± 10 ppm/°C), Very Low Value (Down to 15 μΩ) LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models Infographics Reference Designs FEATURES • High power capability that enables current sensing to 1825 A • Proprietary processing technique produces extremely low resistan. |
Features |
• High power capability that enables current sensing to 1825 A • Proprietary processing technique produces extremely low resistance values • All welded construction • Solid metal nickel-chrome alloy resistive element with unique design for low TCR (down to ± 10 ppm/°C) • Very low inductance (< 5 nH) • Low thermal EMF (as low as < 1.25 μV/°C) • AEC-Q200 qualified • PATENT(S): www.vishay.com/patents • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 STANDARD ELECTRICAL SPECIFICATIONS GLOBAL MODEL SIZE POWER RATING P70 °C W TOLERANCE ±% RESISTANCE V. |
Datasheet |
WSBE8536 Data Sheet
PDF 145.76KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | WSBE8518 |
Vishay |
Power Metal Strip Shunt Resistor | |
2 | WSB06200AT |
Weitron |
High Voltage Power Schottky Rectifier | |
3 | WSB10100T |
WillSEMI |
Schottky Barrier Diode | |
4 | WSB1151 |
Wooseok |
PNP EPITAXIAL SILICON TRANSISTOR | |
5 | WSB20100T |
WillSEMI |
Schottky Barrier Diode | |
6 | WSB20100TF |
WillSEMI |
Schottky Barrier Diode | |
7 | WSB20L100T |
WillSEMI |
Schottky Barrier Diode | |
8 | WSB20L100TF |
WillSEMI |
Schottky Barrier Diode | |
9 | WSB5503W |
Will Semiconductor |
Middle Power Schottky Barrier Diode | |
10 | WSB5507W |
WillSEMI |
Schottky Barrier Diode |