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WSB1151 |
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| Part Number | WSB1151 |
| Manufacturer | Wooseok |
| Description | WSB1151 PNP EPITAXIAL SILICON TRANSISTOR HIGH CURRENT AMPLIFIER ◇ Low Collector Saturation Voltage ◇ Complement to WSD1691 WR0459 ABSOLUTE MAXIMUM RATINGS Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current(DC) Collector Current(Pulse) Collector Power Dissipation(Tc=25℃) Collector Power Dissipation(Ta=25℃) . |
| Features |
=-2A, IB=-200mA IC=-2.0A, RL=5Ω IB1=-IB2=200mA, VCC=-10V
Min
TYP
MA X -10 -10
Unit ㎂ ㎂
60 100 50
200
400 V V ㎲ ㎲ ㎲
-0.14 -0.3 -0.9 0.15 0.78 0.18 -1.2 1 2.5 1
Storage Time Fall Time
* Pulse Test :PW=350㎲ ,Duty Cycle=2% Pulsed # hFE(2) Classification: Classification hFE O 100~200 Y 160~320 G 200~400 JAN. 2003 REV:00 copyright@wooseok s.tech corp. All rights reserved. 2 Datasheet pdf - http://www.DataSheet4U.co.kr/ WSB1151 Static Characteristics -12 -10 DC Current Gain 1000 VCE=-2V IB=-200mA 300 hFE ,DC Current Gain Ic, Collector Current, A VBE(sat) VCE(sat),Saturation Voltag. |
| Datasheet |
 WSB1151 Data Sheet
PDF 198.75KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | WSB10100T |
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| 2 | WSB06200AT |
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| 3 | WSB20100T |
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| 4 | WSB20100TF |
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| 5 | WSB20L100T |
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| 6 | WSB20L100TF |
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| 7 | WSB5503W |
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| 8 | WSB5507W |
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| 9 | WSB5508L |
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| 10 | WSB5510M |
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Schottky Barrier Diode |
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Desde 2024. D4U Semiconductor.
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