TSM1NB60CP |
Part Number | TSM1NB60CP |
Manufacturer | Taiwan Semiconductor |
Description | TSM1NB60CP Taiwan Semiconductor N-Channel Power MOSFET 600V, 1.2A, 10Ω FEATURES ● Low RDS(ON) 9.4Ω (Typ.) ● Low gate charge typical @ 7.7nC (Typ.) ● Low Crss typical @ 8pF (Typ.) ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS ● Power Supply ● Lighting ● Charge. |
Features |
● Low RDS(ON) 9.4Ω (Typ.) ● Low gate charge typical @ 7.7nC (Typ.) ● Low Crss typical @ 8pF (Typ.) ● RoHS Compliant ● Halogen-free KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS 600 V RDS(on) (max) 10 Ω Qg 7.7 nC APPLICATIONS ● Power Supply ● Lighting ● Charger TO-252 (DPAK) Note: MSL 3 (Moisture Sensitivity Level) per J-STD-020 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ±30 Continuous Drain Current TC = 25°C ID 1.2 Pulsed Drain Current (Note 1) IDM 4.8 Total Powe. |
Datasheet |
TSM1NB60CP Data Sheet
PDF 364.12KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | TSM1NB60 |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
2 | TSM1NB60LCW |
Taiwan Semiconductor |
N-Channel Power MOSFET | |
3 | TSM1NB60S |
Taiwan Semiconductor |
600V N-Channel Power MOSFET | |
4 | TSM1N45 |
Taiwan Semiconductor Company |
450V N-Channel Power MOSFET | |
5 | TSM1N45D |
Taiwan Semiconductor Company |
450V N-Channel Power MOSFET | |
6 | TSM1N50 |
Taiwan Semiconductor |
500V N-Channel Power MOSFET | |
7 | TSM1N60 |
Taiwan Semiconductor |
N-Channel Power Enhancement Mode MOSFET | |
8 | TSM1N60L |
Taiwan Semiconductor |
600V N-Channel Power MOSFET | |
9 | TSM1N60S |
Taiwan Semiconductor |
600V N-Channel Power MOSFET | |
10 | TSM1N80 |
Taiwan Semiconductor |
N-Channel Power MOSFET |