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TSM1N60S 600V N-Channel Power MOSFET

TSM1N60S

TSM1N60S
TSM1N60S TSM1N60S
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Part Number TSM1N60S
Manufacturer Taiwan Semiconductor
Description The TSM1N60S is used an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain- to-source diode with a fast recovery time. Designed for hi.
Features
● Robust high voltage termination
● Avalanche energy specified
● Diode is characterized for use in bridge circuits
● Source to Drain d.
Datasheet Datasheet TSM1N60S Data Sheet
PDF 365.45KB
Distributor Stock Price Buy

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