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| Part Number | TK12E60W |
| Distributor | Stock | Price | Buy |
|---|
| Part Number | TK12E60W |
| Manufacturer | Toshiba Semiconductor |
| Title | Silicon N-Channel MOSFET |
| Description | TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (. |
| Features | (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit 1: Gate 2: Drain (Heatsink) 3: Source TO-220 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage . |
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| 2 | TK12E60U |
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| 3 | TK12E80W |
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| 7 | TK120-1A |
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| 8 | TK1214K |
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| 9 | TK1214M |
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| 10 | TK1216K |
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Desde 2024. D4U Semiconductor.
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