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TK12E60W |
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| Part Number | TK12E60W |
| Manufacturer | Toshiba (https://www.toshiba.com/) Semiconductor |
| Description | TK12E60W MOSFETs Silicon N-Channel MOS (DTMOS) TK12E60W 1. Applications • Switching Voltage Regulators 2. Features (1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Su... |
| Features |
(1) (2) (3) Low drain-source on-resistance: RDS(ON) = 0.265 Ω (typ.) by used to Super Junction Structure : DTMOS Easy to control Gate switching Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.6 mA)
3. Packaging and Internal Circuit
1: Gate 2: Drain (Heatsink) 3: Source
TO-220
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temper... |
| Document |
 TK12E60W Data Sheet
PDF 251.39KB |
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